| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a gate insulating film of good quality capable of applying an excellent electrical characteristic to a semiconductor device even if it is formed into a thin film. SOLUTION: A manufacturing method of a gate insulating film includes an oxidizing step of forming a silicon oxide film by making an oxygen containing plasma act on silicon on the surface of a workpiece in a processing chamber of a plasma processing device. A processing temperature in the oxidizing step is beyond 600°C and 1,000°C or less in the oxidizing step. The oxygen-containing plasma is the plasma of oxygen containing processing gas formed by introducing the oxygen-containing processing gas containing at least rare gas and oxygen gas into the processing chamber, and by introducing high frequency or microwave into the processing chamber through an antenna. COPYRIGHT: (C)2007,JPO&INPIT
|
