SEMICONDUCTOR APPARATUS AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor apparatus and its manufacturing method which does not require an ion injection for a threshold value adjustment corresponding to each individual in a low voltage driven transistor with a different threshold value to form the same conductive type channel. SOLUTION: A low voltage driven n-channel transistor LV-N-LVt of a low threshold value type is formed directly on a p-type silicon substrate 1 without forming a well, and a process is reduced by integrating the ion injection process for the threshold value adjustment with the ion injection process for the threshold value adjustment of other transistor. COPYRIGHT: (C)2007,JPO&INPIT