| 摘要 |
PROBLEM TO BE SOLVED: To provide the technology which achieves the high-quality DBR characteristics, such as high reflectivity, low thermal resistance and low electrical resistance, and realizes a wafer having the superior performance to reduce warpages in the epitaxial growth substrate of the surface-emitting optical device structure or generation of the mis-fitting defects, thereby enabling the element's yield to be improved and contributing to the prolonged lifetime of the element. SOLUTION: The semiconductor laminated structure 1 provides a semiconductor multilayer film Bragg reflector 14 having a low-refractive index layer 12 and a high-refractive index layer 13 on a GaAs substrate 11, wherein the low-refractive index layer 12 and the high-refractive index layer 13 are located at regular intervals. The low-refractive index layer 12 contains the Al, As and P constituent elements and has a compressive strain with respect to the GaAs substrate 11, while the high-refractive index layer 13 contains the Ga, As and P constituent elements and has tensile strain with respect to the GaAs substrate 11. COPYRIGHT: (C)2007,JPO&INPIT
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