发明名称 |
Nitride-encapsulated FET (NNCFET) |
摘要 |
A double-gate field effect transistor (DGFET) structure and method of forming such a structure in which the parasitic capacitance under the source/drain regions is substantially reduced are provided. In the present invention, self-aligned isolation regions are provided to reduce the parasitic capacitance in the DGFET structure. Additionally, the present invention encapsulates the silicon-containing channel layer to enable the back-gate to be oxidized to a greater extent thereby reducing the parasitic capacitance of the structure even further.
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申请公布号 |
US2006252241(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20060481532 |
申请日期 |
2006.07.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN K.;HANAFI HUSSEIN I.;SOLOMON PAUL M. |
分类号 |
H01L21/3205;H01L21/76;H01L21/265;H01L21/336;H01L29/786 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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