Photoresists for visible light imaging

摘要

A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar¹ and Ar² are independently selected from monocyclic aryl and monocyclic heteroaryl, R¹ and R² may be the same or different, and have the structure -X-R³ where X is O or S and R³ is C₁-C₆ hydrocarbyl or heteroatom-containing C₁-C₆ hydrocarbyl, and R⁴ and R⁵ are independently selected from the group consisting of hydrogen and -X-R³, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar¹, Ar², or R³ is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.