发明名称 |
SRAM cell having stepped boundary regions and methods of fabrication |
摘要 |
A semiconductor device comprises a substrate. In addition, the semiconductor device comprises an active region and an isolation region. The active region is in the substrate and comprises a semiconductor material. The isolation region is also in the substrate, adjacent the active region and comprises an insulating material. The active region and isolation region form a surface having a step therein. The semiconductor further comprises a dielectric material formed over the step. The dielectric material has a dielectric constant greater than about 8.
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申请公布号 |
US2006252227(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20060486889 |
申请日期 |
2006.07.13 |
申请人 |
LEE WEN-CHIN;YEO YEE-CHIA |
发明人 |
LEE WEN-CHIN;YEO YEE-CHIA |
分类号 |
H01L21/76;H01L21/336;H01L21/8244;H01L27/11;H01L29/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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