| 摘要 |
In a novel rewriteable nonvolatile memory cell formed above a substrate, a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NiO, Nb<SUB>2</SUB>O<SUB>5</SUB>, TiO<SUB>2</SUB>, HfO<SUB>2</SUB>, Al<SUB>2</SUB>O<SUB>3</SUB>, MgO<SUB>x</SUB>, CrO<SUB>2</SUB>, VO, BN, and AlN. In preferred embodiments, the diode is formed as a vertical pillar disposed between conductors. Multiple memory levels can be stacked to form a monolithic three dimensional memory array. In some embodiments, the diode comprises germanium or a germanium alloy, which can be deposited and crystallized at relatively low temperatures, allowing use of aluminum or copper in the conductors.
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