SUBSTRATE TREATING APPARATUS AND ELECTRODE

摘要

A substrate treating apparatus is provided with a reaction chamber (1) for treating a substrate (5); a substrate placing means (22) for placing a plurality of substrates (5) in the reaction chamber (1) one over another in multilevel at prescribed intervals; a means (10) for introducing a treatment gas into the reaction chamber (1); exhausting means (6, 7) for exhausting inside the reaction chamber (1); and a plurality of pairs of comb-shaped electrodes (17, 18) arranged in the reaction chamber (1) for applying alternating current power for generating plasma. Each pair of the comb-shaped electrodes is arranged at a prescribed distance from each plasma treatment plane of the substrates (5) placed by the substrate placing means (22).