Al-Ni-B ALLOY WIRING MATERIAL AND ELEMENT STRUCTURE USING THE SAME

摘要

This invention provides an Al-based alloy wiring material that, in a display device comprising a thin-film transistor and a transparent electrode layer, can be connected directly to a transparent electrode layer such as ITO or IZO and further can be connected directly to a semiconductor layer such as n⁺-Si. The Al-based alloy wiring material is an Al-Ni-B alloy wiring material comprising Ni and B and satisfies a requirement represented by formulae 0.5 = X = 10.0, 0.05 = Y = 11.0, Y + 0.25X = 1.0, and Y + 1.15X = 11.5 wherein X represents the content of nickel in atomic percentage (at%); and Y represent the content of boron in atomic percentage (at%). The balance consists of aluminum.