| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can easily form a MIM capacitor and stabilize the resistance of the lower electrode low, to provide and method of manufacturing the same. SOLUTION: There are provided a first lower layer wiring (31) formed on an insulation film of a semiconductor substrate; a first via hole (61) formed on the first lower wiring; and a MIM capacitor formed on the first via hole being composed of a lower electrode (9), insulating film (8), and upper electrode (12). COPYRIGHT: (C)2007,JPO&INPIT
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