METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS

摘要

PROBLEM TO BE SOLVED: To eliminate a malfunction caused by a difference of an aspect ratio of each contact hole when a wiring layer is formed on a field oxide film and the contact hole to electrically connect an interlayer insulating film to the wiring layer, and an element area is formed simultaneously, and to control an influence of a semiconductor apparatus on an yield or the like. SOLUTION: A process to thin a film thickness of the field oxide film 2 is performed in an area including a position for the contact hole 8 formed after the process to form the field oxide film 2. A difference of reliefs between the surface of the wiring layer 5 and the surface of a silicon substrate 1 in the element area 3 is reduced by thinning the field oxide film 2. The malfunction is eliminated thereby, and the influence of the semiconductor on the yield is controlled. COPYRIGHT: (C)2007,JPO&INPIT