| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial substrate having the heterojunction performed by a semiconductor layer containing P and a semiconductor layer containing As which gives a compound semiconductor element having scarcely characteristic variations, and to provide a manufacturing method of the substrate. SOLUTION: The compound semiconductor epitaxial substrate has a first semiconductor layer which contains P as a group V atom, and has a second semiconductor layer which is joined to the just upper side of the first semiconductor layer and contains As as a group V atom. The spectrum of a specific substrate giving a compound semiconductor element having scarcely characteristic variations which is obtained in a 77K photoluminescence measurement does not correspond to the band gaps of either designed layers, and the wavelength of the peak position of the spectrum of the specific substrate is not smaller than 830 nm and not larger than 1,000 nm. Further, the peak strength of the spectrum of the specific substrate is not larger than the double of the peak strength derived from the growth substrate. COPYRIGHT: (C)2007,JPO&INPIT
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