| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can enhance coating properties of a semiconductor layer by a semiconductor coating layer, and can be attempted to enhance characteristics by a reduction of a leakage current. SOLUTION: This method for manufacturing the semiconductor device comprises a substrate coating layer, the semiconductor layer and the semiconductor coating layer on a substrate in this order. The method for manufacturing the semiconductor device has the steps of performing such a processing that at least a crust of the substrate coating layer is subjected to a side etching in an outer edge region of the semiconductor layer; and making an energy irradiation at least to the outer edge of the semiconductor layer. COPYRIGHT: (C)2007,JPO&INPIT |
