| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering system where the probability of the intrusion of outgases into a sputtered film is reduced, and the improvement of its film quality is made possible. SOLUTION: The sputtering system 100 where a target 40 and a wafer W are arranged at the inside of a chamber 10, and sputtering particles flied out of the target 40 are stuck to the wafer W, so as to form a sputtered film is equipped with: an internal fixture 60 within the chamber provided around a space S including the stroke of the sputtering particles from the target 40 to the wafer W and preventing the scattering of the sputtering particles from the space S to the inner wall of the chamber 10; an inflow port 65 for introducing gaseous argon into the space S partitioned by the internal fixture 60; and an exhaust port 62 provided at the bottom part of the internal fixture 60. Outgases such as H<SB>2</SB>O on H<SB>2</SB>are carried on the flow of the gaseous argon, so as to be efficiently exhausted from the exhaust port 62, and the stagnation of the outgases at the space S can be prevented, thus the intrusion of the outgases into the sputtered film can be reduced. COPYRIGHT: (C)2007,JPO&INPIT
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