发明名称 |
Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device |
摘要 |
A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.
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申请公布号 |
US2006252171(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20060350751 |
申请日期 |
2006.02.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE EUN-KYUNG;CHOI BYOUNG-LYONG;AHN PIL-SOO;KIM JUN-YOUNG;JIN YOUNG-GU |
分类号 |
H01L21/00;A61B1/04;H01L27/146;H01L27/15;H01L31/10;H01L31/12;H01L33/06;H01L33/08;H01L33/34;H04N7/18 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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