发明名称 Protection of a power transistor
摘要 A method and a circuit for protecting a transistor that controls the supply of an at least partially inductive load, including lowering the demagnetization voltage of the inductive load with respect to a demagnetization voltage set by a break-over component connected between a conduction terminal and the control terminal of the transistor.
申请公布号 US2006250742(A1) 申请公布日期 2006.11.09
申请号 US20050262489 申请日期 2005.10.27
申请人 STMICROELECTRONICS S.A. 发明人 FICHERA PIETRO
分类号 H02H7/00 主分类号 H02H7/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利