| 摘要 |
A semiconductor device comprises one or more first transistors of which each source connects to a power wiring, a second transistor of which a source connects to a ground wiring and a drain connects to a drain of the first transistor, one or more third transistors of which each source connects to the power wiring and each drain connects to the drains of the first and second transistors, and a gate potential control circuit which controls the gate potential of the third transistors based on the potential of the power wiring.
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