摘要 |
<p>The production of a substrate comprises supplying a mixture of grain or powder form components comprising silicon melted at a high temperature, silicon with a purity of 99.9% and a binder that is volatile at below the fusing temperature of silicon. The grain or powder form mixture is molded to a thickness of 200-2000 mu m, heated and then cooled. A nearly closed silicon layer (3) is formed after partial evaporation of the binder. An independent claim is also included for a solar cell substrate.</p> |