| 摘要 |
<p>A TFT is provided to minutely control current of a driving TFT by embodying a drain electrode surrounding a channel layer so that a local magnetic field is formed on a semiconductor layer by the current flowing through the drain electrode. A semiconductor layer(120) is formed on a substrate. A gate electrode(140) is formed on the semiconductor layer. A source electrode(160) and a drain electrode(180) are formed in which a predetermined part of the source electrode and the drain electrode comes in contact with the end part of both sides of the semiconductor layer. The drain electrode is formed at the end of one side of the semiconductor layer wherein a part of the drain electrode overlaps the semiconductor layer and another part of the drain electrode surrounds the semiconductor layer. The drain electrode is composed of a first electrode part(182) connected to an OLED, a second electrode part(184) overlapping the semiconductor layer, and a third electrode part(186) which surrounds the semiconductor layer and is formed at the end of one side of the semiconductor layer.</p> |
