| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device which can improve the extraction efficiency of light, a method of manufacturing the same and a nitride semiconductor substrate which can be used for the manufacture thereof. <P>SOLUTION: The light emitting device is provided with a GaN substrate 1, an n-type nitride semiconductor layer (n-type Al<SB>x</SB>Ga<SB>1-x</SB>N layer 3) on a first main surface of the GaN substrate 1, a p-type nitride semiconductor layer (p-type Al<SB>x</SB>Ga<SB>1-x</SB>N layer 5) located further than the n-type nitride semiconductor layer when viewed from the GaN substrate 1, and a light emitting layer (quantum well (MQW) 4) located between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. In this case, the side of the p-type nitride semiconductor layer is down-mounted. In addition, a light is emitted from a second main surface 1a on the main surface on the opposite side to the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The internal circumferential surface of the groove 80 includes a portion (curved surface) which is surface-treated for smoothing. <P>COPYRIGHT: (C)2007,JPO&INPIT |
