| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a MIM-type capacitor with satisfactory properties is formed on a semiconductor substrate, and which is manufactured, without having to add special manufacturing processes, and to provide its manufacturing method. SOLUTION: A MIM capacitor 11 (constituted of a lower electrode film 8a, a capacitor insulating film 9a, and an upper electrode film 10a) formed on a lower interlayer insulating film 3, can dispense with connection holes for the upper electrode, by being formed with a height same as that of a plug 14a connecting between a lower layer wiring 6 and an upper wiring 14c. COPYRIGHT: (C)2007,JPO&INPIT
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