发明名称 THIN FILM WIRING LAYER
摘要 PROBLEM TO BE SOLVED: To provide a thin film wiring layer which is effective as a wiring layer for a flat surface indicator and capable of also improving a moisture resistance, while ensuring a wet etching nature and a heat resistance. SOLUTION: The thin film wiring layer is formed on a substrate consists of a main conductor layer making Ag or Cu a principal component, and a coating layer overlies an upper layer and/or a lower layer of the main conductor layer. The coating layer contains Cu of 1 to 25 atom% as an addition element, and one or two kinds or more addition elements of 1 to 25 atom% selected from (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W), and a total amount of the addition elements is made 35 atom% or less, and a remaining portion is the thin film wiring layer consisting of unescapable dopant and Ni. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006310814(A) 申请公布日期 2006.11.09
申请号 JP20060085921 申请日期 2006.03.27
申请人 HITACHI METALS LTD 发明人 MURATA HIDEO
分类号 H01L23/52;H01L21/3205 主分类号 H01L23/52
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