发明名称 Metrology system and method for stacked wafer alignment
摘要 Using imaging techniques to determine if stacked wafers are in proper alignment. An infrared radiation source and an infrared camera are positioned on opposing sides of a stacked wafer. The infrared radiation source emits infrared radiation that penetrates and passes through the stacked wafer. The infrared radiation is then captured by the infrared camera. Fiducial marks that were previously patterned on each wafer of the stack are exposed in an image produced by the captured infrared radiation. The degree of alignment of the wafers can be measured using the fiducial marks exposed in the image.
申请公布号 US2006249859(A1) 申请公布日期 2006.11.09
申请号 US20050123698 申请日期 2005.05.05
申请人 发明人 EILES TRAVIS M.;RAMANATHAN SHRIRAM
分类号 H01L23/544 主分类号 H01L23/544
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