Inverter arrangement, has bond wire sections with units for generation of damping resistances for reduction of rear oscillation in case of short-circuit of arrangement, where resistances act only in case of short circuit

摘要

The arrangement has an insulated gate bipolar transistor (IGBT) module with free wheeling diodes and bond wire sections (5a-5c), where the sections prevent the diodes against damage in the case of short-circuit. The sections have units for generation of damping resistances for the reduction of rear oscillation in the case of short-circuit of the arrangement, where the resistances act only in the case of short circuit.