| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an integrated muli-junction thin film photoelectric conversion device and its manufacturing method capable of satisfactorily outputting generated electric power without causing leakage in each photoelectric conversion unit, in an integrated multi-junction thin film photoelectric conversion device permitting a silicon composite layer to be applied to an intermediate reflecting layer. <P>SOLUTION: The integrated multi-junction thin film photoelectric conversion device 101 is constituted by integrating multi-junction thin film photoelectric conversion cells each including at least one set of two thin film photoelectric conversion units connected in series via an intermediate layer on a substrate 102 as illustrated in FIG. 1. In the device, the material of the interlayer is n-type Si<SB>1-X</SB>O<SB>X</SB>(0.3<X<0.6), and the amount of doping of an impurity in an intermediate layer adjacent p-type semiconductor layer 106a adjacent to the intermediate layer partly constituting at least one thin film photoelectric conversion unit 106 of thin film photoelectric conversion units 104, 106 of the one set is≤5,000 ppm. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
