INVERSION BIT LINE, NON-VOLATILE MEMORY TRAPPING CHARGE AND ITS OPERATING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory using a memory cell for trapping a charge, and to provide a practical form and an operating method of a memory device based on an inversion bit line.

SOLUTION: The memory device traps the charge which is a substitute of implantation to a source and a drain by using an inversion layer caused by an electric field. The memory cell stores two bits. One bit is on the left side of a charge trap structure and the other bit is on the right side. The deletion state of a positive threshold voltage is caused by using a Fowler-Nordheim (FN) tunnel effect of a negative gate voltage. Thus, a charge balance state is established in a positive voltage. A low current source-side hot electron implantation programming method is used.

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