发明名称 SLURRY FOR METAL FILM CMP, POLISHING METHOD, AND MANUFACTURING METHOD FOR SEMICONDUCTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a slurry for a metal film CMP to polish the metal film stably and evenly at a low friction without causing a defect on the metal film and an insulating film. <P>SOLUTION: The slarry for the metal film CMP has water, polyvinyl pyrrolidone with weight-average molecular weight 20,000 or higher compounded in 0.01 wt.% or more and 0.3 wt.% or less of a total volume, an oxidizing agent, a protective coat forming agent including a first complex forming agent to form a water-insoluble complex, and a second complex forming agent to form a water-soluble complex, and a colloidal silica with a primary particle diameter of 5 to 50 nm are contained. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006310596(A) 申请公布日期 2006.11.09
申请号 JP20050132095 申请日期 2005.04.28
申请人 TOSHIBA CORP 发明人 MINAMI FUKUGAKU;FUKUSHIMA MASARU;KURASHIMA NOBUYUKI;YAMAMOTO SUSUMU;YANO HIROYUKI
分类号 H01L21/304;B24B37/00;B82Y10/00;B82Y99/00;C09K3/14 主分类号 H01L21/304
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