| 摘要 |
PROBLEM TO BE SOLVED: To provide a downsized semiconductor gas sensor having high efficiency of electric power versus temperature raise. SOLUTION: This semiconductor gas sensor is equipped with a heater 4 supported in a beam-like shape on a support member (SOI substrate) made of silicon monocrystal and a Schottky diode formed on the heater 4. First and second electrodes 9 and 10 are formed on the heater 4. The Schottky diode comprises a semiconductor thin-film part 11 formed directly on the heater 4 and made of SiC monocrystal, and a third electrode 12. The second electrode 10 is also used as a thin-film part 11-side electrode of the Schottky diode. COPYRIGHT: (C)2007,JPO&INPIT
|
