发明名称 JOINING METHOD OF GLASS SUBSTRATE AND SEMICONDUCTOR SUBSTRATE AS WELL AS MANUFACTURING METHOD OF MICRO RELAY
摘要 PROBLEM TO BE SOLVED: To prevent the deterioration of bonding strength of a second joint and thereafter, even in case semiconductor substrates are bonded in several times on the same surface of a glass substrate. SOLUTION: A lid body 17 made of a silicon thin film blocking a housing hole 16 fitted to a body 1 and a frame part 31 constituting an armature block 3 are anodically bonded on one surface side of the body 1 consisting of a glass substrate. Before a silicon substrate 100 to be a foundation of the lid body 17 is bonded to the body 1, a surface opposed to the one surface of the body 1 as one of the surfaces of the silicon substrate 100 is counterbored by dry etching, whereby, a gap d is opened between a site other than a site to be the lid body 17 of the silicon substrate 100 and one surface of the body 1. For this, a flatness at a part outside a one-dot broken line as shown in figure 3(a), or a part where the frame part 31 on one surface of the body 1 is anodically bonded is free from deterioration, and bonding strength of the frame part 31 and the body 1 is prevented from deteriorating. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006310176(A) 申请公布日期 2006.11.09
申请号 JP20050133118 申请日期 2005.04.28
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 UEDA HIDEKI;HASHIMOTO TAKESHI;FURUMOTO NORITERU;OKUMURA NAOKI
分类号 H01H49/00 主分类号 H01H49/00
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