发明名称 |
Method of manufacturing semiconductor device having trench isolation |
摘要 |
A semiconductor device includes a plurality of circuit portions of different functions each constructed by including a MOS transistor on an SOI substrate obtained by sequentially stacking a semiconductor substrate, a buried insulating film and a semiconductor layer. The semiconductor device includes first and second portions. The first circuit portion is isolated by being surrounded with a first insulating film provided on an upper portion of the semiconductor layer and a second insulating film penetrating the semiconductor layer to reach the buried insulating film.
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申请公布号 |
US2006249756(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20060481799 |
申请日期 |
2006.07.07 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
MATSUMOTO TAKUJI;TSUJIUCHI MIKIO;IWAMATSU TOSHIAKI;MAEDA SHIGENOBU;HIRANO YUUICHI;MAEGAWA SHIGETO |
分类号 |
H01L21/66;H01L29/768;H01L21/336;H01L21/76;H01L21/762;H01L21/8238;H01L21/8244;H01L21/84;H01L27/08;H01L27/092;H01L27/10;H01L27/11;H01L27/12;H01L29/786 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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