TECHNIQUE FOR FORMING A CONTACT INSULATION LAYER WITH ENHANCED STRESS TRANSFER EFFICIENCY

摘要

By removing an outer spacer 109, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal suicide, a high degree of process compatibility with conventional processes is obtained, while at the same time a contact liner layer 115 may be positioned more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region.