| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device effective for prevention of an Al slide, and to provide a method of manufacturing it. <P>SOLUTION: A recess is provided to the perimeter insulating film of a perimeter region. It is preferable that at least one recess be opened to a contact hole with an Al wiring layer, and a plurality be provided. Since the friction between the Al wiring layer and the perimeter insulating film becomes large due to this, the generation of an Al slide can be inhibited. <P>COPYRIGHT: (C)2007,JPO&INPIT |
