发明名称 NITRIDE FILM AND FILM-FORMING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a nitride film which has a high nitride content and is thick and dense, and to provide a method for easily forming the nitride film on a substrate. SOLUTION: The method for forming the nitride film includes thermal-spraying a mixture substantially composed of a powder of a metallic element or a non-metallic element, which is a raw material for thermal spraying, and a powder of the nitride of the element. The method inhibits a nitriding reaction between element powders and the coagulation of the powders due to consequent crystal growth, by the existence of the nitride powder, and as a result, can easily provide the dense and thick nitride film. The film-forming method also includes previously mixing the nitride powder, thereby increases a nitride content in the film and simultaneously relatively decreases a ratio of an unreacted element powder, and consequently provides the thick film with the high nitride content. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006307298(A) 申请公布日期 2006.11.09
申请号 JP20050133413 申请日期 2005.04.28
申请人 TOYOHASHI UNIV OF TECHNOLOGY 发明人 FUKUMOTO MASAHIRO;YAMADA MOTOHIRO
分类号 C23C4/10;C23C4/06 主分类号 C23C4/10
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