发明名称 Semiconductor device and its manufacturing method
摘要 To improve the reliability and yield of a thin-type semiconductor device as used for a stack-type flash memory, the semiconductor device is manufactured by upheaving each of semiconductor chips (semiconductor devices) obtained by dicing a semiconductor wafer on an adhesive sheet from a backside via the adhesive sheet using an upthrow jig to which ultrasonic vibration is applied so as not to break through the adhesive sheet, and by picking up each semiconductor chip.
申请公布号 US2006252233(A1) 申请公布日期 2006.11.09
申请号 US20050503972 申请日期 2005.05.06
申请人 HONMA HIROSHI;OOROKU NORIYUKI;ODASHIMA HITOSHI 发明人 HONMA HIROSHI;OOROKU NORIYUKI;ODASHIMA HITOSHI
分类号 H01L21/00;H01L21/30;H01L21/46;H01L21/68;H01L29/94 主分类号 H01L21/00
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