| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition having sensitivity to a g-line, an i-line, a KrF excimer laser and an electron beam and usable in a mix and match step of exposure using at least two exposure light sources selected from a g-line, an i-line, a KrF excimer laser and an electron beam, and to provide a resist pattern forming method. <P>SOLUTION: The positive resist composition is used in a step of exposure using at least two exposure light sources selected from a g-line, an i-line, a KrF excimer laser and an electron beam, and contains a resin component (A) which has an acid dissociable dissolution inhibiting group and whose alkali solubility is increased by the action of an acid and an acid generator component (B) which generates an acid upon irradiation with a g-line, an i-line, a KrF excimer laser and an electron beam. <P>COPYRIGHT: (C)2007,JPO&INPIT |
