SURFACE TREATMENT METHOD OF GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE CRYSTAL SUBSTRATE, GROUP-III NITRIDE CRYSTAL SUBSTRATE HAVING EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a surface treatment method of a group-III nitride crystal substrate for efficiently forming a smooth, high quality surface, having a thin damaged layer in a group-III nitride crystal.

SOLUTION: By the surface treatment method of the group-III nitride crystal, the surface of the group-III nitride crystal 1 is polished. A value x of pH of a polishing liquid 17 used for polishing and the value y(mV) of oxidation-reduction potential should satisfy both the relationships y≥-50x+1,000 (Equation 1) and y≤-50x+1,900 (Equation 2).

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