| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of improving the performance of a semiconductor device. SOLUTION: An ONO film for a gate insulating film 25a of a memory transistor of a nonvolatile memory cell is formed, on which the gate electrode 20a of the memory transistor is formed, and the side surface of the gate electrode 20a is oxidized with quick thermal oxidation to form an insulating film 23. A silicon oxide film for gate insulating films 25b, 25d of a control transistor and a high withstand voltage MISFET is formed by thermal oxidation and by CVD after the thermal oxidation, and the silicon oxide film is removed in a MISFET formation region 1B, and thereafter a silicon oxide film for a gate insulating film 25c is formed in the MISFET formation region 1B by thermal oxidation processing. The thickness of the gate insulating films 25b, 25d is thicker than that of the gate insulating film 25c. COPYRIGHT: (C)2007,JPO&INPIT
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