| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure where the leakage of an electric charge to an adjacent pixel can be prevented at a high level. SOLUTION: The imaging device is equipped with a photoelectric converter which is constituted including an n-type semiconductor area 302 and a p-type buried semiconductor area 309, a transferring area (floating diffusion) 307 to which an electric charge generated in the photoelectric converter is transferred, an element separating area 306 which encloses a pixel area including the photoelectric converter and the transferring area 307, and a potential barrier area 310 (310a, 310b and 310c) which encloses at least a part of the pixel area located below the element separating area 306. COPYRIGHT: (C)2007,JPO&INPIT
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