发明名称 |
METHOD OF FORMING LAMINATED FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a simple method for forming a laminated film made of a silicon film and a silicon oxide film on a substrate. SOLUTION: By the method of forming the laminated film, the laminated film made of a silicon film and a silicon oxide film is formed on the substrate from a composition for film formation containing a silane compound and a solvent. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2006310345(A) |
申请公布日期 |
2006.11.09 |
申请号 |
JP20050127473 |
申请日期 |
2005.04.26 |
申请人 |
JSR CORP |
发明人 |
IWAZAWA HARUO;O DOUKAI;MATSUKI YASUO |
分类号 |
H01L21/208;H01L21/316;H01L21/336;H01L29/786 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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