| 摘要 |
The invention includes atomic layer deposition methods and apparatus. In one implementation, an atomic layer deposition apparatus includes a processing chamber, the chamber having an inlet and an outlet; a vacuum source in fluid communication with the outlet; a final valve moveable between an open position and a closed position and having an outlet in fluid communication with the inlet of the chamber and having an inlet; a dump line having an inlet in fluid communication with the inlet of the final valve, the dump line further having an outlet; a safety valve having an outlet in fluid communication with the inlet of the dump line and the inlet of the final valve, the safety valve having an inlet configured to be placed in fluid communication with a fluid source; and an automatic pressure controller in the dump line, between the inlet of the dump line and the outlet of the dump line, and configured to maintain pressure in the dump line at a predetermined pressure at least during a time when the final valve is in the closed position. Other methods and apparatus are provided.
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