Integrated semiconductor component e.g. thyristor, arrangement, has passivation layer area turned away from surface area of material area and formed with covering layer that is chemically inert and corrode-resistant against oxygen radicals

摘要

The arrangement has a semiconductor material area (20) formed with a surface area (20a). An arrangement of semiconductor components (10) is formed in a central area of the semiconductor material area. A passivation layer area (30) is formed in a boundary region of the surface area (20a) . The passivation layer area is turned away from the surface area and is formed with a covering layer (30-2) that is chemically inert and corrode-resistant against oxygen radicals. The passivation layer area is formed with a base layer, which is made from the material such as polyimide. An independent claim is also included for a method of manufacturing an integrated semiconductor component arrangement.