Producing integrated component for large number of different sizes of microchips, involves ejecting carrier strip with protective layer from cavity or cavities by exerting force on protective layer surface facing cavity using ejector(s)

摘要

Producing an integrated component comprises providing a carrier strip with arrangement(s) of chips; placing a casting mold over the carrier strip in such a way that arrangement(s) of chips is covered completely by cavity or cavities of the casting mold; forming a protective layer over arrangement?(s) of chips by filling cavity or cavities with a liquefied encapsulating compound; and ejecting the carrier strip with the protective layer from the cavity or cavities by exerting a force onto a surface of the protective layer facing cavity or cavities. Producing an integrated component comprises providing a carrier strip with arrangement(s) of chips; placing a casting mold over the carrier strip in such a way that arrangement(s) of chips is covered completely by cavity (2) or cavities of the casting mold; forming a protective layer over arrangement?(s) of chips by filling cavity or cavities with a liquefied encapsulating compound; and ejecting the carrier strip with the protective layer from the cavity or cavities by exerting a force onto a surface of the protective layer facing cavity or cavities. The liquefied encapsulating compound transforms into a solid state upon cooling. The force is exerted onto linearly extended surface region(s) of the protective layer. An independent claim is also included for casting mold comprising cavity, and displaceably mounted ejector(s). The cavity is arranged in a contact area. The cavity is delimited by side surfaces (21) and a bottom surface (22). The cavity is designed for the complete coverage of an arrangement of microchips provided on a carrier strip. The ejector(s) is used for ejecting a carrier strip provided with a protective layer. The ejector(s) has linearly extended contact area for the force transmission to the surface of the protective layer.