SEMICONDUCTOR HAVING CONTACT AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device with a contact and a method for manufacturing the same are provided to improve overlap margin between the contact and a bit line in core region by forming a conductive stud through the bit line. A first interlayer dielectric(130) is formed on a semiconductor substrate(100) of a core region. A first interconnection line(132) has a first width on the first interlayer dielectric and is extended in a first direction. A conductive stud(136) is covered at sidewalls of the first interconnection line and contacted to the substrate through the first interconnection line. The first interconnection line is a core bit line.