| 摘要 |
<p>A method for manufacturing a semiconductor device with an LDD(Lightly Doped Drain) structure is provided to prevent an etching solution from penetrating into a lower layer by improving wet-etching resistance against the etching solution using a silicon rate controlled sidewall. A gate stack(550) is formed on a semiconductor substrate(500). Extended source/drain regions are formed in the substrate by performing a first ion implantation on the resultant structure. A buffer oxide layer is formed along an upper surface of the resultant structure. A sidewall nitride layer(620) is formed on the resultant structure by supplying NH3 and SiH2Cl2 to the buffer oxide layer under a predetermined flow rate condition of NH3 and SiH2Cl2. A mask made of oxide is formed on the resultant structure. Deep source/drain regions are formed in the substrate by performing a second ion implantation on the resultant structure using the mask as an ion implantation mask.</p> |
