| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode for suppressing a lateral current and its manufacturing method, suitable for the application of a high-output light emitting diode. <P>SOLUTION: The light emitting diode comprises an insulating board 402, a semiconductor epitaxial structure, a first conductive electrode 416, and a second conductive electrode 412. The semiconductor epitaxial structure comprises, at least, one trench 420, a first conductive semiconductor layer 404 which is formed on a part of the insulating board 402, and in which the bottom of the trench 420 is arranged below to form an electrically insulated region in the semiconductor epitaxial structure, an active layer 406 which is formed on a part of the first conductive semiconductor layer 404 so formed as to expose a remaining first conductive semiconductor layer 404, and a second conductive semiconductor layer 408 formed on the active layer 406. <P>COPYRIGHT: (C)2007,JPO&INPIT |
