| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the effective area of a capacitor more than before, while suppressing charge leakage between memory cells. <P>SOLUTION: A separated insulating film 4 is formed in a separated trench 40 in the upper part of a silicon substrate 1. The separated insulating film 4 is provided with an opening unit 41, which exposes the inner wall and bottom of the separated trench 40. The lower electrode of capacitors C1, C2 of a DRAM (Dynamic Random Access Memory) cell or a lower diffusion layer 24 is extended to the inner wall of the separated trench 40 exposed in the opening unit 41, and a dielectric layer 21 is formed on the inner wall and bottom of the separated trench 40, exposed in the opening unit 41 with a substantially given thickness and a part of the upper electrode 22 is embedded into the opening unit 41. A channel cut layer 301 is formed at the vicinity of bottom of the opening unit 41. <P>COPYRIGHT: (C)2007,JPO&INPIT |
