| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing any junction leakage arising between a silicide layer and a semiconductor substrate, and to provide its manufacturing method. SOLUTION: The semiconductor device provides a gate electrode 3 formed through a gate insulating film 2 on a semiconductor substrate 1, a primary epitaxial growth layer 5 which is formed on the semiconductor substrate 1 in both sides of the gate electrode 3 as an extension area, a sidewall insulating film SW which clads both sides of the gate electrode 3 and a part of the primary epitaxial growth layer 5, a secondary epitaxial growth layer 6 which is formed on the primary epitaxial growth layer 5 exposed from the sidewall insulating film SW as a source or drain region, a sidewall protective film 13 which is formed on the side surface of the secondary epitaxial growth layer 6 protruded from the sidewall insulating film SW for preventing a silicide layer 7 from being formed on this side surface, and the silicide layer 7 formed on the top surface of the secondary epitaxial growth layer 6. COPYRIGHT: (C)2007,JPO&INPIT
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