| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor switch circuit device in which leakage of high frequency signal is suppressed and degradation in strain characteristics is prevented. SOLUTION: One end of the interdigital teeth of two gate electrodes is connected with a gate connection metal layer on a nitride film. The gate connection metal layer is arranged between a first source electrode and a second source electrode and a drain interconnect line or between a first drain electrode and a second drain electrode and a source interconnect line. Since the gate electrode of the off side FET has GND potential as high frequency signal, leakage of high frequency signal is prevented between drain and source. The gate connection metal layer and the two gate electrodes (interdigital teeth) surround the interdigital teeth of one source electrode (gate electrode) thus preventing leakage of high frequency signal. Since resist removing liquid enters between adjacent gate electrodes sufficiently during formation of the gate electrode, lift-off is facilitated. COPYRIGHT: (C)2007,JPO&INPIT
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