METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a high impurity layer for suppressing punch through at an arbitrary position on a semiconductor layer on which a transistor is formed. SOLUTION: A method of manufacturing a semiconductor device includes a process of forming a mask layer 13 on a first conductive type semiconductor substrate 11; process of etching the semiconductor substrate 11 by using the mask layer 13 as a mask to form an concave semiconductor layer 14 on the semiconductor layer 11; process of forming a first insulating layer 15 so that the lower part of the concave semiconductor layer 14 is covered on the semiconductor substrate 11; process of introducing a first conductive type impurity to the first insulating layer 15 to form a heavily-doped layer 16 on the lower part of the concave semiconductor layer 14; process of forming a gate insulating film 17 on the side face of the concave semiconductor layer 14 on the surface of the first insulating layer 15; and process of forming a gate electrode 18 on the gate insulating film 17. COPYRIGHT: (C)2007,JPO&INPIT