| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for preventing the generation of unwanted bias magnetic fields from a wiring, having a ferromagnetic film in an MRAM and the reduction of the writing margin improving the resistance to disturbance of the MRAM. SOLUTION: The magnetic memory comprises memory cells 10 having magnetoresistance elements, write wirings 100 for flowing write currents to generate write magnetic fields for writing information in the memory cells 10, a ferromagnetic film 120 covering at least a part of the surface of the write wiring 100 except a surface FS facing at the memory cells 10; and a bias magnetic field applier 130 which applies a bias magnetic field, containing a first component along the length (X) of the write wiring 100 to the ferromagnetic film 120. The plus and minus signs of the first component are uniform, over at least the overlapping regions RO of the ferromagnetic film 120 that is overlapped with the memory cells 10. COPYRIGHT: (C)2007,JPO&INPIT
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